Accommodation of Grain Boundary Coherency Strain by Interfacial Disconnections
نویسندگان
چکیده
منابع مشابه
Grain rotation mediated by grain boundary dislocations in nanocrystalline platinum
Grain rotation is a well-known phenomenon during high (homologous) temperature deformation and recrystallization of polycrystalline materials. In recent years, grain rotation has also been proposed as a plasticity mechanism at low temperatures (for example, room temperature for metals), especially for nanocrystalline grains with diameter d less than ~15 nm. Here, in tensile-loaded Pt thin films...
متن کاملOf Grain Boundary Facets
Abatraet-constraints on diffusive creep cavity growth along grain boundary facets are studied for the limiting case when all facets oriented approximately normal to an applied tensik load am uniformly cavitated. This situation represents the opposite limiting case to when cavitated facets are we&sepamted and do not intemct with each other. The analysis is done for a 3-D periodic polycrystallii ...
متن کاملFive-parameter grain boundary distribution in grain boundary engineered brass
We report the first application of a five-parameter determination of grain boundary types to grain boundary engineered alpha-brass. The most important findings were that the distribution of planes showed a prevalence of <110> tilt boundaries, especially asymmetric tilt types, and the presence of <111> twist boundaries. This distribution resulted from the low energy of these boundary types.
متن کاملInterfacial coherency stress distribution in TiN/AlN bilayer and multilayer films studied by FEM analysis
The development of interfacial coherency stresses in TiN/AlN bilayer and multilayer films was investigated by finite element method (ABAQUS) using the four-node bilinear quadrilateral axisymmetric element CAX4R. The TiN and AlN layers are always in compression and tension at the interface, respectively, as may be expected from the fact TiN has larger lattice parameter than AlN. Both, the bi-lay...
متن کاملControl of magnetism by interfacial strain in Ni/V2O3 nanostructures
Magnetic properties of thin films can be modified through proximity effects with multilayer structures. Materials that undergo both a structural phase transition (SPT) and a metal to insulator transition (MIT) have been used for this purpose. This crystallographic change induces a stress to the adjacent layer that changes the magnetic properties of the film through magnetoelastic anisotropy. Th...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Microscopy and Microanalysis
سال: 2006
ISSN: 1431-9276,1435-8115
DOI: 10.1017/s1431927606068127